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TLV4170IPWR Datasheet(PDF) 17 Page - Texas Instruments |
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TLV4170IPWR Datasheet(HTML) 17 Page - Texas Instruments |
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17 / 47 page ![]() Time (100 s/div) m 18 V -18 V 37-V PP Sine Wave ( 18.5 V) ± 17 TLV170, TLV2170, TLV4170 www.ti.com SBOS782A – NOVEMBER 2016 – REVISED MAY 2018 Product Folder Links: TLV170 TLV2170 TLV4170 Submit Documentation Feedback Copyright © 2016–2018, Texas Instruments Incorporated 7.3 Feature Description 7.3.1 Operating Characteristics The TLVx170 family of amplifiers is specified for operation from 2.7 V to 36 V (±1.35 V to ±18 V). Many of the specifications apply from –40°C to +125°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in the Typical Characteristics: Table of Graphs section. 7.3.2 Phase-Reversal Protection The TLVx170 family has an internal phase-reversal protection. Many op amps exhibit a phase reversal when the input is driven beyond the linear common-mode range. This condition is most often encountered in noninverting circuits when the input is driven beyond the specified common-mode voltage range, causing the output to reverse into the opposite rail. The input of the TLVx170 prevents phase reversal with excessive common-mode voltage. Instead, the output limits into the appropriate rail. This performance is shown in Figure 26. Figure 26. No Phase Reversal 7.3.3 Electrical Overstress Designers often ask questions about the capability of an op amp to withstand electrical overstress. These questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits for protection from accidental ESD events both before and during product assembly. A good understanding of this basic ESD circuitry and the relevance to an electrical overstress event is helpful. Figure 27 illustrates the ESD circuits contained in the TLVx170 (indicated by the dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input and output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device internal to the op amp. This protection circuitry is intended to remain inactive during normal circuit operation. |
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