© 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJD5304D Rev. A1

1

July 2010

FJD5304D

High Voltage Fast Switching Transistor

Features

• Built-in Free Wheeling Diode

• Wide Safe Operating Area

• Small Variance in Storage Time

• Suitable for Electronic Ballast Application

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

* Pulse Test: PW = 300

µs, Duty Cycle = 2% Pulsed

Thermal Characteristics Ta = 25°C unless otherwise noted

** Device mounted on minimum pad size.

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

700

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

12

V

IC

Collector Current (DC)

4

A

ICP

* Collector Current (Pulse)

8

A

IB

Base Current (DC)

2

A

IBP

* Base Current (Pulse)

4

A

PC

Collector Dissipation

Tc = 25°C

Ta = 25°C

30

1.25

W

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-55 to 150

°C

Symbol

Parameter

Value

Units

Rθja

Thermal Resistance Junction-Ambient **

99

°C/W

C

B

E

Equivalent Circuit

1. Base 2. Collector 3. Emitter

D-PAK

1