TLV62065

SLVSAC4B – NOVEMBER 2010 – REVISED DECEMBER 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

AVIN, PVIN

–0.3

7

V

Voltage(2)

EN, MODE, FB

–0.3

VIN + 0.3 < 7

V

SW

–0.3

7

V

Current (source)

Peak output

Internally limited

A

Junction temperature, TJ

–40

125

°C

Storage temperature, Tstg

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Electrostatic

V(ESD)

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

V

discharge

Machine model

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

AVIN , PVIN

Supply voltage

2.9

5.5

V

Output current capability

2000

mA

Output voltage range for adjustable voltage

0.8

VIN

V

L

Effective inductance

0.7

1

1.6

µH

COUT

Effective output capacitance

4.5

10

22

µF

TA

Operating ambient temperature(1)

–40

85

°C

TJ

Operating junction temperature

–40

125

°C

(1)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the

maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package

in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA x PD(max))

6.4 Thermal Information

TLV62065

THERMAL METRIC(1)

DSG (WSON)

UNIT

8 PINS

RθJA

Junction-to-ambient thermal resistance

64.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

82.6

°C/W

RθJB

Junction-to-board thermal resistance

34.5

°C/W

ψJT

Junction-to-top characterization parameter

1.8

°C/W

ψJB

Junction-to-board characterization parameter

34.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

6.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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