TLV9101IDBVR datasheet(29/91 Pages) TI2

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An ESD event is very short in duration and very high voltage (for example, 1 kV, 100 ns), whereas an EOS event

is long duration and lower voltage (for example, 50 V, 100 ms). The ESD diodes are designed for out-of-circuit

ESD protection (that is, during assembly, test, and storage of the device before being soldered to the PCB).

During an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit

(labeled ESD power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.

Although this behavior is necessary for out-of-circuit protection, excessive current and damage is caused if

activated in-circuit. A transient voltage suppressors (TVS) can be used to prevent damage caused by turning

on the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting resistors and

TVS diodes allows for the use of device ESD diodes to protect against EOS events.

7.3.7 Overload Recovery

Overload recovery is defined as the time required for the op amp output to recover from a saturated state to

a linear state. The output devices of the op amp enter a saturation region when the output voltage exceeds

the rated operating voltage, either due to the high input voltage or the high gain. After the device enters the

saturation region, the charge carriers in the output devices require time to return back to the linear state. After

the charge carriers return back to the linear state, the device begins to slew at the specified slew rate. Thus, the

propagation delay in case of an overload condition is the sum of the overload recovery time and the slew time.

The overload recovery time for the TLV910x is approximately 1 µs.

7.3.8 Typical Specifications and Distributions

Designers often have questions about a typical specification of an amplifier in order to design a more robust

circuit. Due to natural variation in process technology and manufacturing procedures, every specification of an

amplifier will exhibit some amount of deviation from the ideal value, like the input offset voltage of an amplifier.

These deviations often follow Gaussian ("bell curve"), or normal distributions, and circuit designers can leverage

this information to guardband their system, even when there is not a minimum or maximum specification in

Section 6.7.

0.00002%

-1

-21

-31

-41

-51

-61

+21

+31

+41

+51

+61

34.13% 13.59%

34.13%

13.59%

2.145%

2.145% 0.13185%

0.13185%

0.00312%

Figure 7-9. Ideal Gaussian Distribution

Figure 7-9 shows an example distribution, where µ, or mu, is the mean of the distribution, and where σ,

or sigma, is the standard deviation of a system. For a specification that exhibits this kind of distribution,

approximately two-thirds (68.26%) of all units can be expected to have a value within one standard deviation, or

one sigma, of the mean (from µ–σ to µ+σ).

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TLV9101, TLV9102, TLV9104

SBOS943E – FEBRUARY 2019 – REVISED AUGUST 2021

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