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TM130 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # TM130
Description  HIGH POWER GENERAL USE INSULATED TYPE
PDF  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

TM130 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Symbol
VRRM
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A2s
A/
µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Conditions
Single-phase, half-wave 180
° conduction, TC=78°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125
°C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
205
130
2600
2.8
× 104
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
—
—
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
µs
V
V
mA
°C/W
°C/W
M
Ω
Limits
Symbol
IRRM
IDRM
VTM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=125
°C, VRRM applied
Tj=125
°C, VDRM applied
Tj=125
°C, ITM=390A, instantaneous meas.
Tj=125
°C, VD=2/3VDRM
Tj=25
°C, VD=6V, RL=2Ω
Tj=125
°C, VD=1/2VDRM
Tj=25
°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
30
30
1.5
—
3.0
—
100
0.22
0.1
—



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