STTH8R02D-Y datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

STTH8R02D-Y

Characteristics

DocID029557 Rev 2

5/10

Figure 7: Peak reverse recovery current versus dIF

/ dt (typical values, per diode)

Figure 8: Dynamic parameters versus junction

temperature (per diode)

Figure 9: Relative variation of thermal impedance

junction to case total versus pulse duration

Figure 10: Thermal resistance junction to ambient

total versus copper surface under each tab (typical

values, per diode)

100

150

200

250

300

350

400

450

500

F/dt(A/µs)

R M (A )

F = 4 A

R = 160 V

j = 125°C

j = 25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

150

j (°C)

RR; IRM [T j ] / Q RR; IRM [T j = 125°C]

F = 4 A

R = 160 V

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

th (j-c) /Rth (j-c)

Single pulse

100

120

Rth(j-a) (°C/W)

PowerFLAT 5x6 Dual Island

printed circuit board FR4, copper thickness: 35 µm

SCu(cm²)

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