SWITCHING DIODE

FEATURES

CMSD2004S type is a silicon switching dual in series diode

manufactured by the epitaxial planar process, designed for

applications requiring high voltage capability. Power dissipation

MARKING : B6D

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak reverse voltage

VRM

300

V

DC Blocking Voltage

VR

240

V

Average Rectified Output Current

IO

200

mA

Continuous Forward Current

IF

225

mA

Peak Repetitive Forward Current

IFRM

625

mA

Non-Repetitive Peak Forward Surge Current @ t=8.3ms

IFSM

2.5

A

Power Dissipation

PD

250

mW

Thermal Resistance From Junction to Ambient

RθJA

500

℃

/W

Operation Junction and Storage Temperature Range

TJ,TSTG

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

V(BR)

IR= 100μA

240

V

Reverse voltage leakage current

IR

VR=240V

0.1

mA

Forward voltage

VF

IF=100mA

1

V

Diode capacitance

CD

VR=0V,f=1MHz

5

pF

Reveres recovery time

trr

IF=IR=30mA,RL=100Ω

50

ns

SOT-323

1

3

2

1

ｗｗｗ．ｓｘｓｅｍｉ．ｃｏｍ

CMSD2004S

1

2

3