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SGP10N60A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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SGP10N60A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISG2259 eq SGP10N60A Field-Stop IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 1.35 ℃ /W Rth j-c Thermal Resistance,Junction to Case diode 2.5 ℃ /W STATIC CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE=0, IC= 0.5mA 600 -- -- V VGE(th) Gate-Emitter Threshold Voltage VGE= VCE, IC= 0.3mA 3 4 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, VCE= 15V, TC=25℃ 1.7 2.0 2.4 V ICES Zero Gate Voltage Collector Current VCE= 600V, VGE=0 -- -- 40 uA IGES Gate-Emitter Leakage Current VGE=±20V, VCE=0 -- -- ± 100 nA PACKAGE OUTLINE (UNIT: mm) |
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