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BC848CD Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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BC848CD Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd. |
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2 / 5 page ![]() Characteristics at Ta = 25 Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 5 V, IC = 2 mA BC846AD~BC848AD BC846BD~BC848BD BC846CD~BC848CD hFE hFE hFE 110 200 420 220 450 800 - - - Collector Base Voltage at IC = 50 µA BC846D BC847D BC848D VCBO 80 50 30 - - - V Collector Emitter Voltage at IC = 1 mA BC846D BC847D BC848D VCEO 65 45 30 - - - V Emitter Base Voltage at IE = 50 µA BC846D BC847D BC848D VEBO 6 6 5 - - - V Collector Base Cutoff Current at VCB = 30 V ICBO - 15 nA Emitter Base Cutoff Current at VEB = 5 V IEBO - 100 nA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA VCE(sat) - - 0.25 0.6 V Base Emitter Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA VBE 0.58 - 0.7 0.77 V Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 - MHz Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob - 4.5 pF 2 5 |
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