| Electronic Components Datasheet Search |
|
2SA1797 Datasheet(PDF) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. |
|
|
|||||||||||||||||||||||||||||
2SA1797 Datasheet(HTML) 2 Page - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. |
|
2 / 5 page ![]() Production specification PNP Silicon Epitaxial Planar Transistor 2SA1797 E027 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-1.0mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA,IC=0 -6 V Collector cut-off current ICBO VCB=-50V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-2V,IC=-500mA 82 180 120 270 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=-50mA -0.15 -0.35 V Transition frequency fT VCE=-2V, IE=-500mA f=100MHz 200 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 36 pF CLASSIFICATION OF hFE Rank P Q Range 82-180 120-270 Marking AGP AGQ |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |