FPD200 datasheet(2/4 Pages) FILTRONIC

2 / 4 page

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

Datasheet v3.0

FPD200

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

TEST CONDITIONS

ABSOLUTE MAXIMUM

Drain-Source Voltage

VDS

-3V < VGS < -0.5V

Gate-Source Voltage

VGS

0V < VDS < +8V

-3V

Drain-Source Current

IDS

For VDS < 2V

IDSS

Gate Current

Forward or reverse current

10mA

RF Input Power

Under any acceptable bias state

20dBm

Channel Operating Temperature

TCH

Under any acceptable bias state

175°C

Storage Temperature

TSTG

Non-Operating Storage

-65°C to 150°C

Total Power Dissipation

PTOT

See De-Rating Note below

0.5W

Gain Compression

Comp.

Under any bias conditions

5dB

Simultaneous Combination of Limits

2 or more Max. Limits

80%

Notes:

Ambient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause

permanent damage to the device

2Total Power Dissipation defined as: P

TOT ≡ (PDC + PIN) – POUT,

where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power

3Total Power Dissipation to be de-rated as follows above 22

°C:

PTOT= 500mW - (3.6mW/°C) x THS

where THS= heatsink or ambient temperature above 22°C

Example: For a 85

°C carrier temperature: P

TOT = 500 - (3.6mW x (85 – 22)) = 0.27W

4Users should avoid exceeding 80% of 2 or more Limits simultaneously

5 Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.

6 Operating at absolute maximum VD continuously is not recommended. If operation at 8V is considered then IDS

must be reduced in order to keep the part within it's thermal power dissipation limits. Therefore VGS is restricted

to < -0.5V.

PAD LAYOUT:

Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening

PAD

DESCRIPTION

COORDINATES

(µm)

Gate Pad

90, 200

Drain Pad

320, 200

C1/C2

Source Pad

200, 290/110

DIE SIZE

(

µm)

DIE THICKNESS (

µm)

MIN. BOND PAD OPENING

(

µm x µm )

400 x 400

70 x 80

FPD200 Datasheet(PDF) 2 Page - Filtronic Compound Semiconductors

FPD200 Datasheet(HTML) 2 Page - Filtronic Compound Semiconductors

Html Pages

1 2 3 4

Datasheet Download

Link URL