LM4861 MDA MWA

1.1W Audio Power Amplifier with Shutdown Mode

01198626

Die Layout (B - Step)

DIE/WAFER CHARACTERISTICS

Fabrication Attributes

General Die Information

Physical Die Identification

LM4861B

Bond Pad Opening Size (min)

83µm x 83µm

Die Step

B

Bond Pad Metalization

ALUMINUM

Physical Attributes

Passivation

VOM NITRIDE

Wafer Diameter

150mm

Back Side Metal

BARE BACK

Dise Size (Drawn)

1372µm x 2032µm

54.0mils x 80.0mils

Back Side Connection

GND

Thickness

406µm Nominal

Min Pitch

108µm Nominal

Special Assembly Requirements:

Note: Actual die size is rounded to the nearest micron.

Die Bond Pad Coordinate Locations (B - Step)

(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used

SIGNAL NAME

PAD# NUMBER

X/Y COORDINATES

PAD SIZE

XYX

Y

SHUTDOWN

1

-425

710

83

x

83

BYPASS

2

-445

499

83

x

83

NC

3

-445

-34

83

x

170

NC

4

-445

-383

83

x

83

INPUT +

5

-445

-492

83

x

83

INPUT -

6

-352

-710

83

x

83

GND

7

-243

-710

83

x

83

Vo1

8

-91

-710

170

x

83

GND

9

445

-574

83

x

170

VDD

10

445

-2

83

x

170

NC

11

445

387

83

x

83

GND

12

445

633

83

x

170

Vo2

13

-63

710

170

x

83

GND

14

-215

710

83

x

83

www.national.com

10