FDMS2572 Rev.C4

www.fairchildsemi.com

2

Electrical Characteristics T

J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250μA, VGS = 0V

150

V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250μA, referenced to 25°C

180

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 120V, VGS = 0V

1

μA

IGSS

Gate to Source Leakage Current

VGS = ±20V, VDS = 0V

±100

nA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250μA

2

3

4

V

ΔVGS(th)

ΔTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250μA, referenced to 25°C

-9.8

mV/°C

rDS(on)

Drain to Source On Resistance

VGS = 10V, ID = 4.5A

36

47

m

Ω

VGS = 6V, ID = 4.5A

39

53

VGS = 10V, ID = 4.5A, TJ = 125°C

69

103

gFS

Forward Transconductance

VDS = 10V, ID = 4.5A

14

S

(Note 2)

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 75V, VGS = 0V,

f = 1MHz

1960

2610

pF

Coss

Output Capacitance

130

175

pF

Crss

Reverse Transfer Capacitance

30

45

pF

Rg

Gate Resistance

f = 1MHz

0.1

1.3

2.6

Ω

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 75V, ID = 1.0A

VGS = 10V, RGEN = 6Ω

11

20

ns

tr

Rise Time

8

16

ns

td(off)

Turn-Off Delay Time

38

61

ns

tf

Fall Time

31

50

ns

Qg(TOT)

Total Gate Charge at 10V

VGS = 0V to 10V VDD = 75V

ID = 4.5A

31

43

nC

Qgs

Gate to Source Gate Charge

9

nC

Qgd

Gate to Drain “Miller” Charge

7

nC

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage

VGS = 0V, IS = 2.2A

(Note 2)

0.7

1.0

V

trr

Reverse Recovery Time

IF = 4.5A, di/dt = 100A/μs

67

101

ns

Qrr

Reverse Recovery Charge

130

195

nC

Notes:

1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2: Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3: EAS of 150 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 10 A, VDD = 150 V, VGS = 10 V.

a.50°C/W when mounted on

a 1 in2 pad of 2 oz copper

b. 125°C/W when mounted on a

minimum pad of 2 oz copper