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H4RN3DF Datasheet(PDF) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # H4RN3DF
Description  N-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H4RN3DF Datasheet(HTML) 3 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Electrical Characteristics Diagrams
Fig4. On-Resistance vs. G-to-S Voltage
10
8
6
4
0
( )
Gate-Source Voltage-V
V
G S
2
T =25
°C
J
T =125
°C
J
I =20A
D
0
2.5
5.0
7.5
10
12.5
Fig5. On-Resistance vs.TJ
Junction Temperature-T (
°C)
J
-25
75
125
175
150
100
50
25
0
-50
V =10V
G S
I =20A
D
0.5
1.0
2.0
2.5
1.5
www.hxkj.hk
+86-769-23622090
huixin@hxkj.hk
Rev.02
Page 3 of 5
Source-drain voltage -V
(V)
S D
0.6
0.8
1.0
1.2
- 1
10
0
10
1
10
Fig6. Forward characteristic of body diode
0.4
T =125
°C
J
T =25
°C
J
0.2
1
Fig1. Typ. output characteristics
0
( )
Drain-Source Voltage-V
V
D S
0
2
3
4
5
V =3V
G S
V =2.5V
G S
30
40
50
V =10V
G S
V =4.5V
G S
10
20
Fig2. Transfer Characteristic
4.0
3.0
0
1.0
T =25
°C
J
2.0
5.0
0
( )
Drain-Source Voltage-V
V
G S
T =125
°C
J
30
40
50
10
20
Fig3. On-Resistance vs. Drain Current
Drain current-I (A)
D
30
20
5
0
10
15
25
3
5
6
7
4
8
2
V =10V
G S
V =4.5V
G S



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