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40N60SCD1 Datasheet(PDF) 2 Page - IXYS Corporation

Part # 40N60SCD1
Description  CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PACTM
PDF  2 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

40N60SCD1 Datasheet(HTML) 2 Page - IXYS Corporation

  40N60SCD1 Datasheet HTML 1Page - IXYS Corporation 40N60SCD1 Datasheet HTML 2Page - IXYS Corporation  
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© 2003 IXYS All rights reserved
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IXKF 40N60SCD1
Dimensions in mm (1 mm = 0.0394")
Component
Symbol
Conditions
Maximum Ratings
V
ISOL
I
ISOL ≤ 1 mA; 50/60 Hz
2500
V~
T
VJ
-40...+150
°C
T
stg
-40...+125
°C
F
C
mounting force with clip
20 ... 120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
p
coupling capacity between shorted pins
and mounting tab in the case
40
pF
d
S, dA
D pin - S pin
7
mm
d
S, dA
pin - backside metal
5.5
mm
Weight
9g
Series Schottky Diode D
S
Symbol
Conditions
Maximum Ratings
I
F25
T
C = 25°C
60
A
I
F90
T
C = 90°C
40
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
F
I
F = 20 A; TVJ =
25°C
0.9
V
T
VJ = 125°C
0.7
V
R
thJC
2 K/W
R
thJH
with heat transfer paste
2.9
K/W
Anti Parallel Diode D
F
Symbol
Conditions
Maximum Ratings
I
F25
T
C = 25°C
32
A
I
F90
T
C = 90°C
16
A
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
F
I
F = 20 A; TVJ =
25°C
2.1
2.5
V
T
VJ = 125°C
1.4
V
I
RM
I
F = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
15
A
t
rr
V
R = 600 V; VGE = 0 V
70
ns
R
thJC
1.3 K/W
R
thJH
with heat transfer paste
2.6
K/W



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