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MPF0900AMMA2ES Datasheet(PDF) 188 Page - NXP Semiconductors |
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MPF0900AMMA2ES Datasheet(HTML) 188 Page - NXP Semiconductors |
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188 / 205 page ![]() NXP Semiconductors PF09 Nine-channel power management IC with advanced system safety monitoring 17 Thermal characteristics All parameters are specified up to a junction temperature of 150 °C. All parameters are tested at TA from −40 °C to 105 °C, to allow headroom for self-heating during operation. If higher TA operation is required, proper thermal and loading consideration must be made to ensure device operation below the maximum TJ = 150 °C. Symbol Description Min Typ Max Unit TA Ambient operating temperature -40 – 125 °C TJ Junction temperature -40 – 150 °C TST Storage temperature range -55 – 150 °C TPPRT Peak package reflow temperature – – 260 °C Table 234. Thermal characteristics Symbol Description Min Typ Max Unit RθJA Junction to Ambient Thermal Resistance[1] JESD51-7, 2s2p – – 24.4 °C/W ΨJT Junction-to-Top of Package Thermal Characterization Parameter[1] Eight-layer board (4S4P) – – 0.2 °C/W RθJC Junction to Case Thermal Resistance[2] JESD51-7, 1s – – 1.0 °C/W Table 235. QFN56 thermal resistance package dissipation ratings [1] Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. [2] Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT. PF09 All information provided in this document is subject to legal disclaimers. © 2026 NXP B.V. All rights reserved. Product data sheet Rev. 1.3 — 16 December 2025 Document feedback 188 / 205 |
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