October 2013

©

2005 Fairchild Semiconductor Corporation

FDP55N06 / FDPF55N06 Rev. C0

www.fairchildsemi.com

1

FDP55N06 / FDPF55N06

N-Channel UniFETTM MOSFET

60 V, 55 A, 22 mΩ

Features

• RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A

• Low

Gate Charge ( Typ. 30 nC)

• Low Crss (

Typ. 60 pF)

• 100%

Avalanche Tested

Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

TO-220

GD

S

TO-220F

G

DS

G

S

D

Absolute Maximum Ratings T

C = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FDP55N06

FDPF55N06

Unit

VDSS

Drain-Source Voltage

60

V

ID

Drain Current

- Continuous (TC = 25°C)

55

55 *

A

- Continuous (TC = 100°C)

34.8

34.8 *

A

IDM

Drain Current

- Pulsed

(Note 1)

220

220 *

A

VGSS

Gate-Source Voltage

± 25

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

480

mJ

IAR

Avalanche Current

(Note 1)

55

A

EAR

Repetitive Avalanche Energy

(Note 1)

11.4

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

PD

Power Dissipation (TC = 25°C)

114

48

W

- Derate above 25°C

0.9

0.4

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/

8" from case for 5 seconds

300

°C

Symbol

Parameter

FDP55N06

FDPF55N06

Unit

RθJC

Thermal Resistance, Junction-to-Case

, Max.

1.1

2.58

°C/W

RθJS

Thermal Resistance, Case-to-Sink

, Typ.

0.5

--

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

, Max,

62.5

62.5

°C/W