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HS01S80U Datasheet(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Part # HS01S80U
Description  HS01S80U 1A TRIAC
PDF  4 Pages
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Manufacturer  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

HS01S80U Datasheet(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Average gate power dissipation (Tj=125℃)
PG(AV)
0.1
W
Peak gate power
PGM
2
W
Peak pulse voltage
(Tj=25℃; non-repetitive,off-state;FIG.7)
Vpp
2.5
kV
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol
Test Condition
Quadrant
Value
Unit
IGT
VD =12V RL =33
Ω
Ⅱ-Ⅲ
MAX.
10
mA
VGT
Ⅱ-Ⅲ
MAX.
1.3
V
VGD
VD =VDRM Tj =125℃
RL =3.3K
Ω
Ⅱ-Ⅲ
MIN.
0.15
V
IL
IG =1.2IGT
Ⅱ
MAX.
40
mA
Ⅲ
20
IH
IT =100mA
MAX.
20
mA
dV/dt
VD=540V Gate Open Tj =125℃
MIN.
1000
V
/μs
(dI/dt)c
(dV/dt)c=15
V/μs, Tj=125℃
MIN.
2
A/ms
ton
IG=20mA IA=200mA IR=20mA
Tj=25℃
TYP.
2.5
μs
toff
25
VCL
ICL=0.1mA tp=1ms
MIN.
950
V
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX.)
Unit
VTM
ITM =1.1A tp=380
μs
Tj=25℃
1.34
V
VTO
Threshold voltage
Tj=125℃
0.79
V
RD
Dynamic resistance
Tj=125℃
429
mΩ
IDRM
VD =VDRM VR =VRRM
Tj=25℃
2
μA
IRRM
Tj=125℃
0.2
mA
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
junction to case (AC)
55
℃/W
Rth(j-a)
junction to ambient (AC)
150
℃/W
3
　ｏｆ　
1
Ｐａｇｅ　
1.0
Rev.
huixin@hxkj.hk
+86-769-22857832
huixin@hxkj.hk
+86-769-22857832
Rev. 1.0
Ｐａｇｅ
2 ｏｆ4



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