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HT25LC512 Datasheet(PDF) 4 Page - Holtek Semiconductor Inc |
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HT25LC512 Datasheet(HTML) 4 Page - Holtek Semiconductor Inc |
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4 / 11 page ![]() Symbol Parameter Test Conditions Min. Typ. Max. Unit Programming the OTP ROM fSCK SCK Frequency 48 70 160 kHz tWH SCK High Time 3 7.5 10.5 ms tWL SCK Low Time 3 7.5 10.5 ms tCS Minimum CS High Time 2 ¾ ¾ ms tCSS CS Setup Time 2 ¾ ¾ ms tCSH CS Hold Time 2 ¾ ¾ ms tSU Data in Setup Time 100 ¾ ¾ ns tH Data in Hold Time 100 ¾ ¾ ns Note: For normal READ operation, don¢t use the 99H instruction. Test Waveforms and Measurements Output Test Load HT25LC512 Rev. 1.00 4 June 14, 2004 Functional Description Device Operation The HT25LC512 operation is controlled by instructions from the host processor. The HT25LC512 has only 3 kinds of instructions, Memory Read, Status Register read and Product ID Read. Any invalid instruction will be ignored without response from the HT25LC512. A valid instruction starts with the falling edge of CS fol- lowed by the appropriate 8-bit opcode and the memory address location. While the CS pin is low, toggling the SCK pin controls the loading of the opcode and the memory address location through the SI (serial input) pin. All instructions, addresses and data are transferred with the most significant bit (MSB) first. · Memory read Reading the HT25LC512 via the SO (Serial Output) pin requires the following sequence. After the CS line is pulled low to select a device, the READ instruction is transmitted via the SI line followed by the byte ad- dress to read. Upon completion, any data on the SI line will be ignored. The data (D7-D0) at the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high af- ter the data comes out. The READ instruction can be continued since the byte address is automatically in- cremented and data will continue to be shifted out. When the highest address is reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one continuous READ in- struction. 2 . 4 V 0 . 4 5 V A C M e a s u r e m e n t L e v e l A C D r i v i n g L e v e l s 2 . 0 V 0 . 8 V tR, tF< 5ns (10% to 90%) D e v i c e U n d e r T e s t 3 0 p F Memory read, bit sequence is shown as follows: Bit Sequential 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Bit data 0 0 0 0 x 0 1 1 x x x x x x x 0 Bit Sequential 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Bit data A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Note: ²x² don¢t care |
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