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STP25N018M9 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STP25N018M9
Description  N-channel 250 V, 15 mΩ typ., 56 A MDmesh M9 Power MOSFET in a TO‑220 package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP25N018M9 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical drain-source on-resistance
GPDP130820241229RID
17
16
15
14
13
12
0
10
20
30
40
50
RDS(on)
(mΩ)
ID (A)
VGS= 10 V
Figure 8. Normalized on-resistance vs temperature
GPDP130820241229RON
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
RDS(on)
(norm.)
TJ (°C)
VGS= 10 V
Figure 9. Normalized gate threshold vs temperature
GPDP130820241229VTH
1.2
1.0
0.8
0.6
0.4
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID = 250 μA
Figure 10. Normalized breakdown voltage vs temperature
GPDP130820241230BDV
1.10
1.05
1.00
0.95
0.90
0.85
-75
-25
25
75
125
V(BR)DSS
(norm.)
TJ (°C)
ID = 1 mA
Figure 11. Typical reverse diode forward characteristics
GPDP130820241233SDF
1.0
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VSD
(V)
ISD (A)
TJ= 150 °C
TJ= 25 °C
TJ= -55 °C
Figure 12. Typical output capacitance stored energy
GPDP130820241234EOS
10
8
6
4
2
0
0
50
100
150
200
250
EOSS
(µJ)
VDS (V)
STP25N018M9
Electrical characteristics
DS14761 - Rev 2
page 6/12



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