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2N6520 Datasheet(PDF) 4 Page - ON Semiconductor

Part # 2N6520
Description  PNP Epitaxial Silicon Transistor
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6520 Datasheet(HTML) 4 Page - ON Semiconductor

  2N6520 Datasheet HTML 1Page - ON Semiconductor 2N6520 Datasheet HTML 2Page - ON Semiconductor 2N6520 Datasheet HTML 3Page - ON Semiconductor 2N6520 Datasheet HTML 4Page - ON Semiconductor 2N6520 Datasheet HTML 5Page - ON Semiconductor 2N6520 Datasheet HTML 6Page - ON Semiconductor 2N6520 Datasheet HTML 7Page - ON Semiconductor 2N6520 Datasheet HTML 8Page - ON Semiconductor  
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© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N6520 Rev. 2.2
3
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Turn-On Time
Figure 4. Turn-Off Time
Figure 5. Temperature Coefficients
Figure 6. Capacitance
-1
-10
-100
-1000
-10000
1
10
100
1000
VCE = -20V
IC[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
-10000
-10
-100
-1000
-10000
I
C = 10 IB
V
CE(sat)
V
BE(sat)
I
C[mA], COLLECTOR CURRENT
-1
-10
-100
10
100
1000
I
C/IB= 5
T
J=25
oC
V
CE(off) = -100V
t
D @ VBE(off)=-2.0V
t
R
I
C[mA], COLLECTOR CURRENT
-1
-10
-100
100
1000
IC/IB= 5
IB1 = IB2
TJ=25
oC
VCE(off) = -100V
tSTG
tF
IC[mA], COLLECTOR CURRENT
-1
-10
-100
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-55
oC to 25oC
-55
oC to 125oC
-55
oC to 125oC
R
θ VB for VBE
R
θVC for VCE(sat)
I
C/IB = 10
I
C[mA], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
Cob
Cib
f=1MHz
VCB[V], COLLECTOR-BASE VOLTAGE



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