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TP65H030G4PWS Datasheet(PDF) 1 Page - Renesas Technology Corp |
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TP65H030G4PWS Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 13 page  Datasheet TP65H030G4PWS 650V SuperGaN® GaN FET in TO-247-3 (source tab) R07DS1601EU0200 Rev.2.00 Nov 25, 2025 Page 1 © 2025 Renesas Electronics Description The TP65H030G4PWS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV plus platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption and reliability. The Gen IV plus SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Benefits ■ Superior normally off architecture with D-mode GaN HEMT ■ Compatible with standard silicon drivers ■ Enhanced noise immunity with a 4V threshold voltage with no negative gate drive required ■ Enables high-efficiency, high power density, and reliable power conversion ■ Facilitates cost-effective GaN adoption reducing system size, weight, and costs Product/Schematic Diagrams TP65H030G4PWS TO-247-3 Cascode Schematic Symbol Cascode Device Structure Features ■ Ultra-fast switching Gen IV plus GaN ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Reduced crossover loss ■ Negligible Qrr ■ RoHS compliant and Halogen-free packaging Applications ■ AI datacenter and telecom power supplies ■ E-mobility charging ■ PV inverter ■ UPS ■ BESS Specifications VDS (V) 650 VDSS(TR)(V) maximum 800 RDS(on) (mΩ) maximum [1] 41 QOSS (nC) typical 135 QG (nC) typical 24.5 1. Dynamic RDS(on) (see Figure 17 and Figure 18) |
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