Potens semiconductor corp.

Ver.1.02

2

PDC2604Z

20V N-Channel MOSFETs

Static State Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=16V , VGS=0V , TJ=125

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=

±12V , VDS=0V

---

---

±100

nA

RDS(ON)

Static Drain-Source On-Resistance2

VGS=4.5V , ID=15A

2

2.8

3.5

m



VGS=2.5V , ID=10A

2.8

3.5

4.5

m



VGS=1.8V , ID=6A

4

5

7

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.3

0.65

1

V

gfs

Forward Transconductance

VDS=5V , ID=5A

---

35

---

S

Qg

Total Gate Charge

VDS=10V , VGS=4.5V , ID=5A

---

52

100

nC

Qgs

Gate-Source Charge

---

6.6

12

Qgd

Gate-Drain Charge

---

13.8

28

Td(on)

Turn-On Delay Time

VDD=10V , VGS=4.5V , RG=3.3



ID=1A

---

20.2

40

ns

Tr

Rise Time

---

31.2

60

Td(off)

Turn-Off Delay Time

---

68.5

120

Tf

Fall Time

---

21.2

42

Ciss

Input Capacitance

VDS=10V , VGS=0V , F=1MHz

---

3870

5500

pF

Coss

Output Capacitance

---

580

850

Crss

Reverse Transfer Capacitance

---

340

600

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.3

2.6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

80

A

ISM

Pulsed Source Current2

---

---

160

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

trr

Reverse Recovery Time

VGS=0V,IS=1A , di/dt=100A/µs

TJ=25

℃

---

---

---

ns

Qrr

Reverse Recovery Charge

---

---

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics

Dynamic Characteristics