Potens semiconductor corp.

Ver.1.02

2

PDB2114S

20V N+P Dual Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250µA

20

---

---

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25℃

---

---

1

µA

VDS=16V , VGS=0V , TJ=125℃

---

---

10

µA

IGSS

Gate-Source Leakage Current

VGS=±10V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=2A

---

18

22

m



VGS=2.5V , ID=1.5A

---

23

30

m



VGS=1.8V , ID=1 A

31

40

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250µA

0.4

0.6

1

V

gfs

Forward Transconductance

VDS=10V , ID=1A

---

4

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=10V , VGS=4.5V , ID=3A

---

5.3

8

nC

Qgs

Gate-Source Charge2 , 3

---

0.5

2

Qgd

Gate-Drain Charge2 , 3

---

1.8

3

Td(on)

Turn-On Delay Time2 , 3

VDD=10V , VGS=4.5V , RG=6



ID=3A

---

4.1

6.2

ns

Tr

Rise Time2 , 3

---

11.6

18

Td(off)

Turn-Off Delay Time2 , 3

---

23.9

36

Tf

Fall Time2 , 3

---

7.6

12

Ciss

Input Capacitance

VDS=10V , VGS=0V , F=1MHz

---

490

750

pF

Coss

Output Capacitance

---

90

140

Crss

Reverse Transfer Capacitance

---

70

120

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

6

A

ISM

Pulsed Source Current

---

---

12

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

N-CH Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.