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PDC2305Z Datasheet(PDF) 2 Page - Potens Semiconductor Corp. |
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PDC2305Z Datasheet(HTML) 2 Page - Potens Semiconductor Corp. |
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2 / 6 page ![]() Potens semiconductor corp. Ver.1.01 2 PDC2305Z 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID= -250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID= -1mA --- -0.01 --- V/℃ IDSS Drain-Source Leakage Current VDS= -20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS= -16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS= -4.5V , ID=-6A --- 12 15 m VGS= -2.5V , ID=-4A --- 15 20 VGS= -1.8V , ID=-3A --- 20 26 VGS(th) Gate Threshold Voltage VGS=VDS , ID = -250uA -0.3 -0.6 -1.0 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS= -10V , IS=-6A --- 20 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS= -10V , VGS=-4.5V , ID=-6A --- 27 40 nC Qgs Gate-Source Charge2 , 3 --- 2.4 4.8 Qgd Gate-Drain Charge2 , 3 --- 5.3 8 Td(on) Turn-On Delay Time2 , 3 VDD= -10V , VGS=-4.5V , RG=25 ID= -1A --- 16.2 31 nS Tr Rise Time2 , 3 --- 43.5 83 Td(off) Turn-Off Delay Time2 , 3 --- 114 217 Tf Fall Time2 , 3 --- 28.8 55 Ciss Input Capacitance VDS= -15V , VGS=0V , F=1MHz --- 2320 3370 pF Coss Output Capacitance --- 280 410 Crss Reverse Transfer Capacitance --- 175 260 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -11 A ISM Pulsed Source Current --- --- -44 A VSD Diode Forward Voltage VGS=0V , IS= -1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (T J=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings |
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