Potens semiconductor corp.

Ver.1.01

2

PDC2602X

20V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

20

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.013

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=16V , VGS=0V , TJ=125

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V , ID=15A

---

1.1

1.4

m



VGS=2.5V , ID=10A

---

1.24

1.7

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.4

0.6

1.0

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-3.5

---

mV/

℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

30

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=16V , VGS=4.5V , ID=10A

---

173

260

nC

Qgs

Gate-Source Charge3 , 4

---

35

53

Qgd

Gate-Drain Charge3 , 4

---

34

51

Td(on)

Turn-On Delay Time3 , 4

VDD=10V , VGS=4.5V , RG=3.3



ID=1A

---

30

60

ns

Tr

Rise Time3 , 4

---

80

160

Td(off)

Turn-Off Delay Time3 , 4

---

180

360

Tf

Fall Time3 , 4

---

60

120

Ciss

Input Capacitance

VDS=16V , VGS=0V , F=1MHz

---

11950

17900

pF

Coss

Output Capacitance

---

1347

2020

Crss

Reverse Transfer Capacitance

---

1008

1500

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.35

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

210

A

ISM

Pulsed Source Current

---

---

420

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=20V,VGS=10V,L=0.1mH,IAS=110A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings