Potens semiconductor corp.

Ver.1.02

2

PDC2603Z

20V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-20

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.01

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=

-20V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=

-16V , VGS=0V , TJ=125

℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±12V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-4.5V , ID=-8A

---

6

8

m



VGS=

-2.5V , ID=-5A

---

8

11

VGS=

-1.8V , ID=-3A

---

11

16

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250uA

-0.3

-0.6

-1.0

V

gfs

Forward Transconductance

VDS=

-10V , IS=-5A

---

20

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=

-10V , VGS=-4.5V , ID=-5A

---

44.4

80

nC

Qgs

Gate-Source Charge2 , 3

---

7.2

14

Qgd

Gate-Drain Charge2 , 3

---

10.2

20

Td(on)

Turn-On Delay Time2 , 3

VDD=

-10V , VGS=-4.5V , RG=25

ID=

-1A

---

13.2

26

nS

Tr

Rise Time2 , 3

---

68

120

Td(off)

Turn-Off Delay Time2 , 3

---

160

320

Tf

Fall Time2 , 3

---

154

300

Ciss

Input Capacitance

VDS=

-15V , VGS=0V , F=1MHz

---

4060

8000

pF

Coss

Output Capacitance

---

520

1000

Crss

Reverse Transfer Capacitance

---

400

800

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-60

A

ISM

Pulsed Source Current

---

---

-120

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25

℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

3.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings