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CY22K7
Document #: 38-07333 Rev. OBS
Page 6 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Supply Voltage .................................................– 0.5 to +4.0V
Input Voltage ........................................... – 0.5V to VDD + 0.5
Storage Temperature (Non-Condensing) .. – 65
°C to +150°C
Junction Temperature............................................... +150
°C
Package Power Dissipation........................................... 0.7W
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ............................. >2000V
CY22K7 DC Operating Conditions Over which the DC Characteristics are Guaranteed
Parameter
Description
Min.
Max.
Unit
VDD
3.3V Power Supply Voltages
3.135
3.465
V
TA
Operating Temperature, Ambient
0
70
°C
CL
Maximum Capacitive Load on
SDRAM_OUT
PCICLK
PCICLK_F
AGPCLK
USB, REF
30
30
30
30
20
pF
fREF
Reference Frequency, Oscillator Nominal Value
14.318
14.318
MHz
tPU
Power-up time for all VDD's to reach minimum specified voltage (power
ramps must be monotonic)
0.05
50
ms
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min. Max. Unit
VIH
High-level Input Voltage
Except Crystal Pads. Threshold voltage for crystal pads = VDD/2
2.0
V
VIL
Low-level Input Voltage
Except Crystal Pads
0.8
V
IIH
Input High Current
0 < VIN < VDD
10
µA
IIL
Input Low Current
0 < VIN < VDD
50
µA
IOH
High-level Output Current SDRAM_OUT
VOUT = 2.0V
−19
mA
PCICLK
VOUT = 2.0V
−26
PCICLK_F
VOUT = 2.0V
−19
AGPCLK
VOUT = 2.0V
−26
USB, USB/IO, REF
VOUT = 2.0V
−22
IOL
Low-level Output Current
CPUCLK
VOUT = 0.3V
16
mA
SDRAM_OUT
VOUT = 0.8V
12
PCICLK
VOUT = 0.8V
19
PCICLK_F
VOUT = 0.8V
12
AGPCLK
VOUT = 0.8V
19
USB, USB/IO, REF
VOUT = 0.8V
16
IOZ
Output Leakage Current
Three-state
10
µA
IDD
3.3V Power Supply Current VDD = 3.465V, FCPU = 133 MHz
175
mA
IDDPD
3.3V Shutdown Current
VDD = 3.465V
200
µA
VIHS
SMBus Input High Level
0.7
V
VILS
SMBus Input Low Level
0.3
V
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