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2SC5027 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SC5027
Description  Silicon NPN Triple Diffused Type (PCT Process)
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5027 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5027
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC5027
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
• High breakdown voltage: VCEO = 300 V
• Small collector output capacitance: Cob = 3.0 pF (typ.)
• Recommended for chroma output and driver applications for
line-operated TV horizontal.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
100
mA
Base current
IB
50
mA
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 240 V, IE = 0
―
―
1.0
µA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
―
1.0
µA
hFE (1)
VCE = 10 V, IC = 4 mA
20
―
―
DC current gain
hFE (2)
VCE = 10 V, IC = 20 mA
30
―
200
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
―
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 10 mA, IB = 1 mA
―
―
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 20 mA
50
70
―
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
―
3.0
―
pF
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
C5027
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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