Potens semiconductor corp.

Ver.1.03

2

PDC3907X

30V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

---

---

V

IDSS

Drain-Source Leakage Current

VDS=-30V , VGS=0V , TJ=25

℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=125

℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V , ID=-8A

---

16.5

19

m



VGS=-4.5V , ID=-5A

---

26

31

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.6

-2.5

V

gfs

Forward Transconductance

VDS=-10V , IS=-3A

---

12

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=-15V , VGS=-10V , ID=-20A

---

17

26

nC

Qgs

Gate-Source Charge2 , 3

---

3

4.5

Qgd

Gate-Drain Charge2 , 3

---

4

6.5

Td(on)

Turn-On Delay Time2 , 3

VDD=-15V , VGS=-10V , RG=25



ID=-20A

---

7.2

11

ns

Tr

Rise Time2 , 3

---

38

57

Td(off)

Turn-Off Delay Time2 , 3

---

34

51

Tf

Fall Time2 , 3

---

8.2

12

Ciss

Input Capacitance

VDS=-15V , VGS=0V , F=1MHz

---

1100

1650

pF

Coss

Output Capacitance

---

170

255

Crss

Reverse Transfer Capacitance

---

120

180

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

11

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-35

A

ISM

Pulsed Source Current

---

---

-70

A

VSD

Diode Forward Voltage

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1

V

trr

Reverse Recovery Time

VR=-30V, IS=-10A

di/dt=100A/µs, TJ=25

℃

---

150

---

ns

Qrr

Reverse Recovery Charge

---

250

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-33A.,Starting TJ=25

℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings