Potens semiconductor corp.

Ver.1.03

2

PDC3907Z

30V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-30

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.03

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=

-27V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=

-24V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-10V , ID=-8A

---

14.5

18

m



VGS=

-4.5V , ID=-6A

---

23

30

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250uA

-1.2

-1.6

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4

---

mV/

℃

gfs

Forward Transconductance

VDS=

-10V , ID=-8A

---

6.8

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge2 , 3

VDS=

-15V , VGS=-4.5V , ID=-5A

---

11

17

nC

Qgs

Gate-Source Charge2 , 3

---

3.4

6

Qgd

Gate-Drain Charge2 , 3

---

4.2

8

Td(on)

Turn-On Delay Time2 , 3

VDD=

-15V , VGS=-10V , RG=6

ID=

-1A

---

5.8

11

ns

Tr

Rise Time2 , 3

---

18.8

36

Td(off)

Turn-Off Delay Time2 , 3

---

46.9

90

Tf

Fall Time2 , 3

---

12.3

23

Ciss

Input Capacitance

VDS=

-15V , VGS=0V , F=1MHz

---

1250

2500

pF

Coss

Output Capacitance

---

160

320

Crss

Reverse Transfer Capacitance

---

90

180

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-30

A

ISM

Pulsed Source Current

---

---

-60

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25℃

---

---

-1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=-25V,VGS=-10V,L=0.1mH,IAS=-33A.,Starting TJ=25

℃

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings