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PDC3908AX Datasheet(PDF) 1 Page - Potens Semiconductor Corp.

Part # PDC3908AX
Description  30V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDC3908AX Datasheet(HTML) 1 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.01
1
PDC3908AX
30V N-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous (TC=25
℃)
65
A
Drain Current
– Continuous (TC=100
℃)
41
A
IDM
Drain Current
– Pulsed1
260
A
EAS
Single Pulse Avalanche Energy2
45
mJ
IAS
Single Pulse Avalanche Current2
30
A
PD
Power Dissipation (TC=25
℃)
54
W
Power Dissipation
– Derate above 25
℃
0.43
W/
℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
RθJC
Thermal Resistance Junction to Case
---
2.3
℃/W
BVDSS
RDSON
ID
30V
7.2m
65A
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 30V,65A, RDS(ON) =7.2m
Ω@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
General Description
Features
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Applications
PPAK5X6 Pin Configuration
D
G
S
D
G
S
 MB / VGA / Vcore
 POL Applications
 SMPS 2nd SR
D D
D
S S
D
S
G
D D
D
S
S


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