Potens semiconductor corp.

Ver.1.01

2

PDC3910Z

30V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.04

---

V/

℃

IDSS

Drain-Source Leakage Current

VDS=30V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=125

℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance3

VGS=10V , ID=10A

---

9.4

12

m



VGS=4.5V , ID=5A

---

13

18

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.8

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4

---

mV/

℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

6.4

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=15V , VGS=4.5V , ID=5A

---

7.4

12

nC

Qgs

Gate-Source Charge3 , 4

---

2.3

5

Qgd

Gate-Drain Charge3 , 4

---

3

6

Td(on)

Turn-On Delay Time3 , 4

VDD=15V , VGS=10V , RG=6



ID=1A

---

3.8

7

ns

Tr

Rise Time3 , 4

---

10

19

Td(off)

Turn-Off Delay Time3 , 4

---

22

42

Tf

Fall Time3 , 4

---

6.6

13

Ciss

Input Capacitance

VDS=25V , VGS=0V , F=1MHz

---

620

900

pF

Coss

Output Capacitance

---

85

125

Crss

Reverse Transfer Capacitance

---

60

90

Rg

Gate resistance

VGS=0V, VDS=0V, f=1MHz

---

2.8

5.6



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

35

A

ISM

Pulsed Source Current3

---

---

70

A

VSD

Diode Forward Voltage3

VGS=0V , IS=1A , TJ=25

℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings