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PDD0906 Datasheet(PDF) 1 Page - Potens Semiconductor Corp. |
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PDD0906 Datasheet(HTML) 1 Page - Potens Semiconductor Corp. |
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1 / 5 page  Potens semiconductor corp. Ver.1.01 1 PDD0906 100V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Sou rce Voltage ± 20 V ID Drain Current – Continuous (TC=25℃) 15 A Drain Current – Continuous (TC=100℃) 9.5 A IDM Drain Current – Pulsed 1 60 A PD Power Dissipation (TC=25℃) 50 W Power Dissipation – Derate above 25℃ 0.4 W/℃ TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ BVDSS RDSON ID 100V 90m 15A Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃ /W RθJC Thermal Resistance Junction to Case --- 2.5 ℃ /W These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 100V,15A, RDS(ON) =90mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration D G S D G S Networking Load Switch LED applications |
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