Potens semiconductor corp.

Ver.1.00

2

PDD0976

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

100

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.054

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=100V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=80V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=+20V , VDS=0V

---

---

100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=15A

---

7.4

9.2

m



VGS=4.5V , ID=8A

---

10.6

14

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-5.5

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=3A

---

11

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=50V , VGS=10V , ID=8.5A

---

37.8

76

nC

Qgs

Gate-Source Charge3 , 4

---

7.8

16

Qgd

Gate-Drain Charge3 , 4

---

8.4

17

Td(on)

Turn-On Delay Time3 , 4

VDD=50V , VGS=10V , RG=6



ID=1A

---

14.6

30

ns

Tr

Rise Time3 , 4

---

21.5

44

Td(off)

Turn-Off Delay Time3 , 4

---

54

108

Tf

Fall Time3 , 4

---

84.3

168

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

2250

4500

pF

Coss

Output Capacitance

---

410

820

Crss

Reverse Transfer Capacitance

---

25

50

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.43

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

60

A

ISM

Pulsed Source Current

---

---

120

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VGS=0V,IS=15A , di/dt=100A/µs

TJ=25℃

---

42.4

---

nS

Qrr

Reverse Recovery Charge

---

46.5

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=65A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings