Potens semiconductor corp.

Ver.1.00

2

PDD0978B

100V N-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250

μA

100

---

---

V

IDSS

Drain-Source Leakage Current

VDS=80V , VGS=0V , TJ=25℃

---

---

1

μA

VDS=80V , VGS=0V , TJ=85℃

---

---

10

μA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V , ID=15A

---

5

6

m



VGS=4.5V , ID=10A

---

6.4

8.3

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250

μA

1.2

1.6

2.5

V

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=50V , VGS=10V , ID=40A

---

37

55

nC

Qgs

Gate-Source Charge3 , 4

---

5.3

8

Qgd

Gate-Drain Charge3 , 4

---

8.7

13

Td(on)

Turn-On Delay Time3 , 4

VDD=50V , VGS=10V , RG=6



ID=40A

---

15

23

ns

Tr

Rise Time3 , 4

---

28

42

Td(off)

Turn-Off Delay Time3 , 4

---

45

68

Tf

Fall Time3 , 4

---

32

48

Ciss

Input Capacitance

VDS=50V , VGS=0V , F=1MHz

---

2420

3620

pF

Coss

Output Capacitance

---

320

480

Crss

Reverse Transfer Capacitance

---

10

15

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

1.5

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

VDD=50V, L=0.1mH, IAS=48A

115

---

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

80

A

ISM

Pulsed Source Current

---

---

160

A

VSD

Diode Forward Voltage

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

trr

Reverse Recovery Time

VR=50V, IS=10A

di/dt=100A/µs , TJ=25℃

---

50

---

ns

Qrr

Reverse Recovery Charge

---

90

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=64A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300

μs , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings

Guaranteed Avalanche Energy