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PDD15P15 Datasheet(PDF) 2 Page - Potens Semiconductor Corp.

Part # PDD15P15
Description  150V P-Channel MOSFETs
PDF  6 Pages
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Manufacturer  POTENS [Potens Semiconductor Corp.]
Direct Link  http://potens-semi.com/en/
Logo POTENS - Potens Semiconductor Corp.

PDD15P15 Datasheet(HTML) 2 Page - Potens Semiconductor Corp.

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Potens semiconductor corp.
Ver.1.01
2
PDD15P15
150V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250µA
-150
---
---
V
IDSS
Drain-Source Leakage Current
VDS=-150V , VGS=0V , TJ=25℃
---
---
-1
µA
VDS=-120V , VGS=0V , TJ=85℃
---
---
-10
µA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-8A
---
295
360
m
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250µA
-2
-3
-4
V
Dynamic and switching Characteristics
Qg
Total Gate Charge3,4
VDS=-75V , VGS=-10V , ID=-5A
---
15.5
25
nC
Qgs
Gate-Source Charge3,4
---
4.2
7
Qgd
Gate-Drain Charge3,4
---
3.1
5
Td(on)
Turn-On Delay Time3,4
VDD=-75V , VGS=-10V , RG=6
ID=-5A
---
25
40
ns
Tr
Rise Time3,4
---
12
20
Td(off)
Turn-Off Delay Time3,4
---
40
60
Tf
Fall Time3,4
---
22
35
Ciss
Input Capacitance
VDS=-75V , VGS=0V , F=1MHz
---
740
1100
pF
Coss
Output Capacitance
---
45
70
Crss
Reverse Transfer Capacitance
---
24
40
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
VDD=-50V, L=0.1mH, IAS=-27A
36.4
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-10
A
ISM
Pulsed Source Current
---
---
-20
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
VR=-100V, IS=-10A
di/dt=100A/µs , TJ=25℃
---
65
---
ns
Qrr
Reverse Recovery Charge
---
155
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=-50V,VGS=-10V,L=0.1mH,IAS=-37A.,Starting TJ=25℃
3.
The data tested by pulsed , pulse width ≦ 300
μs , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (T
J=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
Guaranteed Avalanche Energy



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