| Electronic Components Datasheet Search |
|
IRG4PC60F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IRG4PC60F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() ISG2287 eq IRG4PC60F NPT Field-Stop IGBT www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 0.24 ℃ /W Rth j-c Thermal Resistance,Junction to Case diode 0.61 ℃ /W STATIC CHARACTERISTICS(TJ = 25 °C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-Emitter Breakdown Voltage VGE=0, IC= 0.25mA 600 -- -- V VGE(th) Gate-Emitter Threshold Voltage VGE= VCE, IC= 2mA 3.0 -- 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 60A, VCE= 15V, TC=25℃ -- 1.5 1.8 V VCE(sat) Collector-Emitter Saturation Voltage IC= 60A, VCE= 15V, TC=150℃ -- 1.5 -- V ICES Zero Gate Voltage Collector Current VCE= 600V, VGE=0 -- -- 250 uA IGES Gate-Emitter Leakage Current VGE=±20V, VCE=0 -- -- ± 100 nA REVERSE DIODE (FRED) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VF Diode Forward Voltage IF=50A,TJ=25℃ -- 2.9 -- V IF=100A -- 3.97 -- V IF=50A,TJ=125℃ -- 2.36 -- V |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |