Potens semiconductor corp.

Ver.1.01

2

PDD6901

60V P-Channel MOSFETs

Off Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=

-250uA

-60

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.036

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=

-60V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=

-48V , VGS=0V , TJ=125℃

---

---

-10

uA

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

On Characteristics

RDS(ON)

Static Drain-Source On-Resistance

VGS=

-10V , ID=-20A

---

7.6

9.2

m



VGS=

-4.5V , ID=-10A

---

9.2

12

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =

-250uA

-1.2

-1.6

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-6.3

---

mV/℃

gfs

Forward Transconductance

VDS=

-10V , ID=-3A

---

18

---

S

Dynamic and switching Characteristics

Qg

Total Gate Charge3 , 4

VDS=

-48V , VGS=-10V , ID=-5A

---

141

210

nC

Qgs

Gate-Source Charge3 , 4

---

17

25.5

Qgd

Gate-Drain Charge3 , 4

---

28.6

43

Td(on)

Turn-On Delay Time3 , 4

VDD=

-48V , VGS=-10V , RG=6

ID=

-1A

---

70

140

ns

Tr

Rise Time3 , 4

---

205

410

Td(off)

Turn-Off Delay Time3 , 4

---

402

804

Tf

Fall Time3 , 4

---

197

394

Ciss

Input Capacitance

VDS=

-25V , VGS=0V , F=1MHz

---

8620

12930

pF

Coss

Output Capacitance

---

486

730

Crss

Reverse Transfer Capacitance

---

420

650

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

-70

A

ISM

Pulsed Source Current

---

---

-140

A

VSD

Diode Forward Voltage

VGS=0V , IS=

-1A , TJ=25℃

---

---

-1

V

trr

Reverse Recovery Time3

VR=-50V, IS=

-10A

dI/dt=100A/µs, TJ=25

℃

---

60

---

ns

Qrr

Reverse Recovery Charge3

---

60

---

nC

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=50V,VGS=10V,L=0.1mH,IAS=80A.,RG=25

,Starting T

J

=25

℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25

℃, unless otherwise noted)

Drain-Source Diode Characteristics and Maximum Ratings