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MBR1050 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR1050 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Rectifier Diode MBR1050 www.iscsemi.com 1 FEATURES · Low Forward Voltage Drop, High Current Capacity · Low Power Loss, High Efficiency · High Surge Capability APPLICATIONS · Free Wheeling Diode · High Frequency Inverters · Polarlity Protection ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 50 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current (8.3ms Single Half-Sine Wave) 150 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER TYP UNIT Rth j-l Thermal Resistance,Junction to Lead 2.0 ℃ /W TO-220C Package 3 1 2 |
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