STTH30L06CG datasheet(2/8 Pages) STMICROELECTRONICS

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STTH30L06C

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.94 x IF(AV) + 0.017 IF

(RMS)

Table 6: Dynamic Characteristics (per diode)

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

Per diode

1.7

°C/W

Total

1.15

Rth(c)

Coupling

0.6

°C/W

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 150°C

400

VF **

Forward voltage drop

Tj = 25°C

IF = 15A

1.55

Tj = 150°C

0.95

1.2

Tj = 25°C

IF = 30A

1.76

Tj = 150°C

1.15

1.45

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 15A

VR = 400V

dIF/dt = 100 A/µs

8.5

tfr

Forward recovery

time

Tj = 25°C

IF = 15A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

300

VFP

Forward recovery

voltage

Tj = 25°C

IF = 15A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

3.0

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