Potens semiconductor corp.

Ver.1.01

2

PDP3908

30V N-Channel MOSFETs

Static State Characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

30

---

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.04

---

V/℃

IDSS

Drain-Source Leakage Current

VDS=30V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=24V , VGS=0V , TJ=125℃

---

---

10

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

RDS(ON)

Static Drain-Source On-Resistance3

VGS=10V , ID=16A

---

7.5

9

m



VGS=4.5V , ID=8A

---

10

14

m



VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4

---

mV/℃

gfs

Forward Transconductance

VDS=10V , ID=8A

---

14

---

S

Qg

Total Gate Charge3 , 4

VDS=15V , VGS=4.5V , ID=20A

---

7.5

15

nC

Qgs

Gate-Source Charge3 , 4

---

1.3

2.5

Qgd

Gate-Drain Charge3 , 4

---

4.5

9

Td(on)

Turn-On Delay Time3 , 4

VDD=15V , VGS=10V , RG=3.3



ID=15A

---

4.8

9.5

ns

Tr

Rise Time3 , 4

---

12.5

20

Td(off)

Turn-Off Delay Time3 , 4

---

27.6

45

Tf

Fall Time3 , 4

---

8.2

16

Ciss

Input Capacitance

VDS=25V , VGS=0V , F=1MHz

---

750

1080

pF

Coss

Output Capacitance

---

150

230

Crss

Reverse Transfer Capacitance

---

110

200

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

2.7

---



Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

EAS

Single Pulse Avalanche Energy

VDD=25V, L=0.1mH, IAS=15A

12

---

---

mJ

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

VG=VD=0V , Force Current

---

---

70

A

ISM

Pulsed Source Current3

---

---

140

A

VSD

Diode Forward Voltage3

VGS=0V , IS=1A , TJ=25℃

---

---

1

V

Note :

1.

Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.

VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25℃.

3.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

4.

Essentially independent of operating temperature.

Electrical Characteristics (T

J=25 ℃, unless otherwise noted)

Drain-Source Diode Characteristics

Dynamic Characteristics

Guaranteed Avalanche Energy