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25P10AV Datasheet(PDF) 49 Page - Numonyx B.V |
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25P10AV Datasheet(HTML) 49 Page - Numonyx B.V |
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49 / 51 page ![]() M25P10-A Revision history 49/51 13 Revision history Table 25. Document revision history Date Revision Changes 25-Feb-2001 1.0 Document written. 12-Sep-2002 1.1 VFQFPN8 package (MLP8) added. Clarification of descriptions of entering Standby Power mode from Deep Power-down mode, and of terminating an instruction sequence or data-out sequence. 13-Dec-2002 1.2 Typical Page Program time improved. Write Protect setup and hold times specified, for applications that switch Write Protect to exit the Hardware Protection mode immediately before a WRSR, and to enter the Hardware Protection mode again immediately after. 21-Feb-2003 1.3 Erroneous address ranges corrected in memory organization table. 24-Nov-2003 2.0 Table of contents, warning about exposed paddle on MLP8, and Pb-free options added. 40 MHz AC characteristics table included as well as 25 MHz. ICC3(max), tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8 package. 08-Mar-2005 3.0 Devices with Process technology Code X added (Read Identification (RDID) and Table 20: AC characteristics (50 MHz operation, device grade 6)) added. SO8 narrow package specifications updated. Notes 1 and 2 removed from Table 24: Ordering information scheme. Note 1 to Table 9: Absolute maximum ratings changed, note 2 removed and TLEAD values removed. Small text changes. End timing line of tSHQZ modified in Figure 25: Output timing. 01-Apr-2005 4.0 Read Identification (RDID), Deep Power-down (DP) and Release from Deep Power-down and Read Electronic Signature (RES) instructions, and Active Power, Standby Power and Deep Power-down modes paragraph clarified. 01-Aug-2005 5.0 Updated Page Program (PP) instructions in Page Programming, Page Program (PP) and Table 16: Instruction times (device grade 6). 14-Apr-2006 6 All packages are ECOPACK® compliant. Grade 3 information added (see Table 10, Table 11, Table 15, Table 17, Table 18 and Table 24). Figure 3: Bus master and memory devices on the SPI bus modified and Note 2 added. Table 11: Data retention and endurance added. 40MHz frequency condition modified for ICC3 in Table 14: DC characteristics (device grade 6). Table 14: DC characteristics (device grade 6) shows preliminary data. MLP package renamed as VFQFPN and specifications updated (see silhouette on first page, Figure 27 and Table 22). Note 2 added below Figure 26 and Note 2 added below Figure 27. VWI parameter for device grade 3 added to Table 8: Power-up timing and VWI threshold. /X Process added to Table 24: Ordering information scheme. |
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