LTO-DMS
MBR4040 thru MBR4060
40 Amp HT Power Schottky Barrier Rectifier
40 Volts to 60 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 6 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
Millimeter
Inches
Dim
Min..
Max
Min.
Max.
A
4.70
5.30
0.185
0.209
B
2.79
3.18
0.110
0.125
C
1.50
2.50
0.059
0.098
D
1.00
1.40
0.040
0.055
E
2.00
2.40
0.079
0.094
F
3.00
3.40
0.118
0.133
G
0.400
0.800
0.016
0.031
H
21.8
22.4
0.860
0.883
J
15.9
16.5
0.627
0.650
K
5.45
----
0.215
----
L
20.2
20.6
0.795
0.810
M
4.00
4.60
0.157
0.180
N
3.00
3.40
0.118
0.133
P
6.80
7.62
0.268
0.300
Q
4.44
5.30
0.175
0.210
R
1.72
2.03
0.068
0.080
Symbol
Characteristics
MBR4040
MBR4045
MBR4060
Unit
VRRM
Maximum Recurrent Peak Reverse Voltage
40
45
60
V
VRM
Maximum DC Blocking Voltage
40
45
60
V
VR(RMS) Maximum RMS Voltage
28
31.5
42
V
VF
Maximum Forward Voltage Drop Per Element
IF=40A @TJ=25°C
0.70
0.80
V
IF(AV)
Average Forward Current
40
A
IFSM
8.3ms Single Half-Sine-Wave
Superimposed On Rated Load
300
A
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
TJ=25°C
TJ=125°C
0.2
40
mA
RthJC
Typical Thermal Resistance (Note 2)
2.0
°C/ W
CJ
Typical Junction Capacitance (Note 3)
400
pF
TJ
Operating Temperature Range
-55to+150
°C
TSTG
Storage Temperature Range
-55to+175
°C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
TO-3P
Revision: 1
2002/06/17
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