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AP03H06DW Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP03H06DW
Description  60V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP03H06DW Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP03H06DW
60V N+N-Channel Enhancement Mode MOSFET
AP03H06DW REV1.0
永源微電子科技有限公司
Description
The AP03H06DW uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =0.3A
RDS(ON) < 1800mΩ @ VGS=10V （Type：1400mΩ）
ESD=1.6KV HBM
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP03H06DW
SOT363-6L
03H06
3000
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
0.3
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
0.15
A
IDM
Pulsed Drain Current
1
A
PD@TC=25
℃
Power Dissipation
0.38
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
℃
RθJA
Thermal Resistance Junction-Ambient 1
135
℃/W
RθJC
Thermal Resistance Junction-Case1
100
℃/W


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