AP2N100MSI

1000V N-Channel Enhancement Mode MOSFET

AP2N100MSI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 μA

1000 1100

V

ΔBVDSS/ ΔTJ Breakdown Voltage TemperatureCoefficient

ID=250μA, Referenced to25°C

0.74

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS =1000 V, VGS = 0 V

1

μA

IDSS

Zero Gate Voltage Drain Current

VDS = 720 V, TC = 125°C

10

μA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

-100

nA

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID =250 uA

2.0

3.5

4.0

V

RDS(On)

Drain-Source On-state Resistance

VGS=10 V, ID =4.5 A,

8000 9600

mΩ

Ciss

Input Capacitance

VDS=25 V, VGS=0V, f=1.0 MHz

308

pF

Coss

Output Capacitance

32

pF

Crss

Reverse Transfer Capacitance

6.2

pF

td(on)

Turn On Delay Time

VDD=500 V, ID=1.5A,

RG=25Ω

35

ns

tr

Rising Time

12

ns

td(off)

Turn Off Delay Time

85

ns

tf

Fall Time

53

ns

Qg

Total Gate Charge

VDS=800V, ID=1.5A,

VGS=15V

16

nC

Qgs

Gate-Source Charge

1.2

nC

Qgd

Gate-Drain Charge

11.5

nC

ISM

Maximum Pulsed Drain-Source Diode Forward Current

1.5

A

VSD

Diode Forward Voltage

VGS= 0 V, IS = 9 A

1.4

V

trr

Reverse Recovery Time

VGS=0V, IS=1.5A, dIF/dt=100

A/μs Note4)

380

ns

Qrr

Reverse Recovery Charge

1.45

μC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . L=20mH IAS=3A, VDD=90V, RG=25Ω, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.