AP2N65DIY

650V N-Channel Enhancement Mode MOSFET

臺灣永源微電子科技有限公司

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS = 0V, ID = 250µA

650

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = 650V, VGS = 0V, TJ = 25ºC

--

--

1

μA

Gate-Source Leakage

IGSS

VGS = ±30V

--

--

±

100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

3.0

--

4.0

V

Drain-Source On-Resistance

(Note3)

RDS(on)

VGS = 10V, ID = 1.0A

--

4

4.8

Ω

Input Capacitance

Ciss

VGS = 0V,

VDS =

25V, f =

1.0MHz

--

310

--

pF

Output Capacitance

Coss

--

39

--

Reverse Transfer Capacitance

Crss

--

6

--

Total Gate Charge

Qg

VDD = 520V, ID = 2.0A,

VGS = 10V

--

8.0

--

nC

Gate-Source Charge

Qgs

--

1.2

--

Gate-Drain Charge

Qgd

--

5

--

Turn-on Delay Time

td(on)

VDD = 300V, ID = 2.0A,

RG = 25 Ω

--

7.8

--

ns

Turn-on Rise Time

tr

--

33

--

Turn-off Delay Time

td(off)

--

23

--

Turn-off Fall Time

tf

--

59

--

Continuous Body Diode Current

IS

TC = 25 ºC

--

--

2

A

Pulsed Diode Forward Current

ISM

--

--

8

Body Diode Voltage

VSD

TJ = 25ºC, ISD = 2.0A, VGS = 0V

--

--

1.4

V

Reverse Recovery Time

trr

VGS = 0V,IS = 2.0A,

diF/dt =100A /μs

--

80

--

ns

Reverse Recovery Charge

Qrr

--

1.8

--

μC

Notes

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

3.

Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

AP2N65D/Y Rve1.0