AP3N30D

300V N-Channel Enhancement Mode MOSFET

AP3N30D RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

300

330

--

V

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS = 10V, ID = 1.5A

--

2600

3600

mΩ

IDSS

Zero Gate Voltage Drain Current

VDS = 300V, VGS = 0V, TJ = 25ºC

--

--

1

μA

VDS = 240V, VGS = 0V, TJ = 125ºC

--

--

100

IGSS

Gate-Source Leakage

VGS = ±25V

--

--

±100

nA

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V, f = 1.0MHz

--

138

--

pF

Coss

Output Capacitance

--

30

--

Crss

Reverse Transfer Capacitance

--

5

--

Qg

Total Gate Charge

VDD = 240V, ID = 3.0A, VGS = 10V

--

4.4

--

nC

Qgs

Gate-Source Charge

--

0.7

--

Qgd

Gate-Drain Charge

--

2

--

td(on)

Turn-on Delay Time

VDD = 150V, ID = 3.0A, RG = 25 Ω

--

18

--

ns

tr

Turn-on Rise Time

--

55

--

td(off)

Turn-off Delay Time

--

60

--

tf

Turn-off Fall Time

--

55

--

IS

Continuous Body Diode Current

TC = 25 ºC

--

--

3

A

ISM

Pulsed Diode Forward Current

--

--

12

trr

Reverse Recovery Time

VGS = 0V,IS = 3A, diF/dt =100A /μs

--

250

--

ns

Qrr

Reverse Recovery Charge

--

1.8

--

μC

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 3A, VGS = 0V

--

--

1.4

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.