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AP4V02LI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP4V02LI Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP4V02LI -20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司 Description The AP4V02LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-4.5A RDS(ON) < 60mΩ @ VGS=4.5V（ Type：49mΩ） Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP4V02LI SOT23-6L AP4V02LI 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, -VGS @ -10V1 -4.5 A ID@TA=70℃ Continuous Drain Current, -VGS @ -10V1 -3.9 A IDM Pulsed Drain Current2 -14 A PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 85 ℃/W RθJC Thermal Resistance Junction-Case1 25 ℃/W |
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