AP08P02AF

-20V P-Channel Enhancement Mode MOSFET

AP08P02AF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.4

-0.7

-1.0

V

RDS(on)

Static Drain-Source on-Resistance

VGS =-4.5V, ID =-2A

-

290

350

mΩ

VGS =-2.5V, ID =-1A

-

380

500

Ciss

Input Capacitance

VDS = -10V, VGS = 0V,

f = 1.0MHz

-

54

-

pF

Coss

Output Capacitance

-

11

-

pF

Crss

Reverse Transfer Capacitance

-

25

-

pF

td(on)

Turn-on Delay Time

VDD = -10V, RL=5Ω,

RGEN=3Ω,VGS=-4.5V,

-

6.7

-

ns

tr

Turn-on Rise Time

-

4.8

-

ns

td(off)

Turn-off Delay Time

-

17.3

-

ns

tf

Turn-off Fall Time

-

7.4

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-0.8

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-4.0

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -0.8A

-

-

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.